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Model NDT451AN

Description ON Semiconductor Si NChannel MOSFET NDT451AN, 7.2 A, Vds=30 V, 3-pin+solder SOT-223 package

Brand: ON Semiconductor

Packaging TO-261-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	4
Technical parameters/drain source resistance:	0.03 Ω
Technical parameters/dissipated power:	3 W
Technical parameters/threshold voltage:	1.6 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/rise time:	13 ns
Technical parameters/Input capacitance (Ciss):	720pF @15V(Vds)
Technical parameters/rated power (Max):	1.1 W
Technical parameters/descent time:	10 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	3 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-261-4
Dimensions/Length:	6.7 mm
Dimensions/Width:	3.7 mm
Dimensions/Height:	1.7 mm
Dimensions/Packaging:	TO-261-4
Physical parameters/operating temperature:	-65℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Industrial, Motor Drive and Control, Power Management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
NDT451AN	TI	类似代替	SOT-223-4	FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
NDT451AN	National Semiconductor	类似代替	SOT-223-4	FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
NDT451AN	ON Semiconductor	类似代替	TO-261-4	FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷	PDF
NDT451AN	Fairchild	类似代替	TO-261-4	FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷	PDF
NDT451AN_NL	Fairchild	功能相似	SOT-223	N-Channel Enhancement Mode Field Effect Transistor