Technical parameters/number of channels: | 1 |
|
Encapsulation parameters/Encapsulation: | SOT-223-4 |
|
Dimensions/Width: | 3.5 mm |
|
Dimensions/Packaging: | SOT-223-4 |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TI | 类似代替 | SOT-223-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
||
|
|
National Semiconductor | 类似代替 | SOT-223-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
||
NDT451AN
|
ON Semiconductor | 类似代替 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
||
NDT451AN
|
Fairchild | 类似代替 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT451AN. 场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
|
||
|
|
Fairchild | 功能相似 | SOT-223 |
N-Channel Enhancement Mode Field Effect Transistor
|
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