Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 60.0 A
Technical parameters/drain source resistance: 5.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 100W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 60.0 A
Technical parameters/Input capacitance (Ciss): 4100pF @15V(Vds)
Technical parameters/dissipated power (Max): 100W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD18N55M5
|
ST Microelectronics | 类似代替 | TO-252-3 |
STMICROELECTRONICS STD18N55M5 晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
|
||
STD60NF3LLT4
|
ST Microelectronics | 类似代替 | TO-252-3 |
DPAK N-CH 30V 60A
|
||
STD6N95K5
|
ST Microelectronics | 类似代替 | TO-252-3 |
STMICROELECTRONICS STD6N95K5 功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review