Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.18 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 90 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 550 V
Technical parameters/leakage source breakdown voltage: 550 V
Technical parameters/Continuous drain current (Ids): 16A
Technical parameters/rise time: 9.5 ns
Technical parameters/Input capacitance (Ciss): 1260pF @100V(Vds)
Technical parameters/rated power (Max): 90 W
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Power Management, Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD11NM50N
|
ST Microelectronics | 类似代替 | TO-252-3 |
STMICROELECTRONICS STD11NM50N 晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V
|
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