Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 60.0 A
Technical parameters/drain source resistance: 7.50 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 100 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±16.0 V
Technical parameters/Continuous drain current (Ids): 60.0 A
Technical parameters/rise time: 130 ns
Technical parameters/Input capacitance (Ciss): 2210pF @25V(Vds)
Technical parameters/rated power (Max): 100 W
Technical parameters/descent time: 36.5 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 100W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD100NH03LT4
|
ST Microelectronics | 类似代替 | TO-252-3 |
N沟道30V - 0.005ohm - 60A - DPAK封装的STripFET TM III功率MOSFET N-channel 30V - 0.005ohm - 60A - DPAK STripFET TM III Power MOSFET
|
||
STD60NH03LT4
|
ST Microelectronics | 类似代替 | TO-252-3 |
N沟道30V - 0.0075 W¯¯ - 60A DPAK / IPAK的STripFET III功率MOSFET N-CHANNEL 30V - 0.0075 W - 60A DPAK/IPAK STripFET III POWER MOSFET
|
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