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Model STD60NH03LT4
Description NSTripFET III Power MOSFET N-CHANNEL 30V -0.0075 W -60A DPAK/IPAK
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Brand: ST Microelectronics
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7352) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 30.0 V

Technical parameters/rated current: 60.0 A

Technical parameters/drain source resistance: 9.00 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 70 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 60.0 A

Technical parameters/rise time: 95 ns

Technical parameters/Input capacitance (Ciss): 2200pF @25V(Vds)

Technical parameters/rated power (Max): 70 W

Technical parameters/descent time: 15 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 70W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.6 mm

External dimensions/width: 6.2 mm

External dimensions/height: 2.4 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STD60NF3LLT4 STD60NF3LLT4 ST Microelectronics 类似代替 TO-252-3
DPAK N-CH 30V 60A
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