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Model STD6N95K5

Description STMICROELECTRONICS STD6N95K5 功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V

Brand: ST Microelectronics

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	1 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	90 W
Technical parameters/threshold voltage:	4 V
Technical parameters/Input capacitance:	450 pF
Technical parameters/drain source voltage (Vds):	950 V
Technical parameters/Continuous drain current (Ids):	9A
Technical parameters/rise time:	12 ns
Technical parameters/Input capacitance (Ciss):	450pF @100V(Vds)
Technical parameters/rated power (Max):	90 W
Technical parameters/descent time:	21 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	90W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Industrial, Power Management, Power Management, Industrial,
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

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	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	STD17NF25	ST Microelectronics	类似代替	TO-252-3	STMICROELECTRONICS STD17NF25 晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V	PDF
	STD3NK60ZT4	ST Microelectronics	类似代替	TO-252-3	STMICROELECTRONICS STD3NK60ZT4 功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V	PDF