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Home Page   Classification of electronic components   NAND02GR3B2CZA6E
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Model NAND02GR3B2CZA6E
Description 1Gigabit, 2 Gigabit, 2112 bytes/1056 word pages, 1.8V/3V, NAND Flash Memory 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Product QR code
Brand: ST Microelectronics
Packaging BGA
Delivery time
Packaging method Tray
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8500) Minimum order quantity(1)
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Technical parameters/digits: 8

Technical parameters/access time (Max): 25000 ns

Technical parameters/operating temperature (Max): 85 ℃

Technical parameters/operating temperature (Min): -40 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 63

Encapsulation parameters/Encapsulation: BGA

External dimensions/packaging: BGA

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tray

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NAND02GR3B2DZA6E NAND02GR3B2DZA6E Micron 功能相似 TFBGA-63
NAND Flash Parallel 1.8V 2G-bit 256M x 8 25us 63Pin VFBGA Tray
PDF
NAND02GR3B2DZA6E NAND02GR3B2DZA6E Numonyx 功能相似 VFBGA-63
NAND Flash Parallel 1.8V 2G-bit 256M x 8 25us 63Pin VFBGA Tray
PDF
NAND02GW3B2DZA6E NAND02GW3B2DZA6E ST Microelectronics 功能相似 FBGA
2-Gbit, 2112Byte/1056-word page multiplane architecture, 1.8V or 3V, NAND flash memories
NAND02GW3B2DZA6E NAND02GW3B2DZA6E Numonyx 功能相似 VFBGA-63
2-Gbit, 2112Byte/1056-word page multiplane architecture, 1.8V or 3V, NAND flash memories
PDF
NAND02GW3B2DZA6E NAND02GW3B2DZA6E Micron 功能相似 TFBGA-63
2-Gbit, 2112Byte/1056-word page multiplane architecture, 1.8V or 3V, NAND flash memories
PDF

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