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Model NAND02GW3B2DZA6E
Description 2-Gbit, 2112Byte/1056-word page multiplane architecture, 1.8V or 3V, NAND flash memories
Product QR code
Brand: Micron
Packaging TFBGA-63
Delivery time
Packaging method Tray
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8784) Minimum order quantity(1)
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Technical parameters/digits: 8

Technical parameters/access time (Max): 25000 ns

Technical parameters/operating temperature (Max): 85 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/power supply voltage: 2.7V ~ 3.6V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 63

Encapsulation parameters/Encapsulation: TFBGA-63

External dimensions/packaging: TFBGA-63

Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tray

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NAND02GR3B2DZA6E NAND02GR3B2DZA6E Micron 功能相似 TFBGA-63
2-Gbit, 2112Byte/1056-word page multiplane architecture, 1.8V or 3V, NAND flash memories
PDF
NAND02GR3B2DZA6E NAND02GR3B2DZA6E Numonyx 功能相似 VFBGA-63
2-Gbit, 2112Byte/1056-word page multiplane architecture, 1.8V or 3V, NAND flash memories
PDF
NAND02GR3B2DZA6F NAND02GR3B2DZA6F Micron 功能相似 BGA
2-Gbit, 2112Byte/1056-word page multiplane architecture, 1.8V or 3V, NAND flash memories
PDF
NAND02GW3B2CZA6F NAND02GW3B2CZA6F Micron 功能相似 BGA
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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