Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.01A
Other/Product Lifecycle: Unknown
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
0204-125
|
Microsemi | 功能相似 | JT-55 |
Trans RF BJT NPN 32V 16A 9Pin Case 55JT
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MRF392
|
M/A-Com | 功能相似 | 744A-01 |
射频线控制的“ Q”宽带功率晶体管125W , 30到500MHz , 28V The RF Line Controlled “Q” Broadband Power Transistor 125W, 30 to 500MHz, 28V
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Advanced Semiconductor | 功能相似 |
射频线控制的“ Q”宽带功率晶体管125W , 30到500MHz , 28V The RF Line Controlled “Q” Broadband Power Transistor 125W, 30 to 500MHz, 28V
|
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MRF393
|
M/A-Com | 功能相似 | 744A-01 |
射频线控制的“ Q”宽带功率晶体管100W , 30到500MHz , 28V The RF Line Controlled “Q” Broadband Power Transistor 100W, 30 to 500MHz, 28V
|
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