Technical parameters/polarity: NPN
Technical parameters/dissipated power: 270 W
Technical parameters/output power: 100 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/gain: 8.5 dB
Technical parameters/minimum current amplification factor (hFE): 40
Technical parameters/rated power (Max): 100 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 744A-01
External dimensions/packaging: 744A-01
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF392
|
M/A-Com | 功能相似 | 744A-01 |
100W, 30 to 500MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON
|
||
|
|
Advanced Semiconductor | 功能相似 |
100W, 30 to 500MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON
|
|||
MRF393
|
M/A-Com | 功能相似 | 744A-01 |
100W, 30 to 500MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON
|
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