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Model MRF392
Description RF controlled "Q" broadband power transistor 125W, 30 to 500 MHz ， 28V The RF Line Controlled “Q” Broadband Power Transistor 125W, 30 to 500MHz, 28V
Product QR code
Brand: M/A-Com
Packaging 744A-01
Delivery time
Packaging method Tray
Standard packaging quantity 1
831.87  yuan 831.87yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4336) Minimum order quantity(1)
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Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

270 W

 

Technical parameters/output power:

125 W

 

Technical parameters/breakdown voltage (collector emitter):

30 V

 

Technical parameters/gain:

10 dB

 

Technical parameters/minimum current amplification factor (hFE):

40 @1A, 5V

 

Technical parameters/rated power (Max):

125 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

744A-01

 

Dimensions/Packaging:

744A-01

 

Physical parameters/operating temperature:

200℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tray

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRF392 MRF392 M/A-Com 功能相似 744A-01
100W, 30 to 500MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON
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MRF392 MRF392 Advanced Semiconductor 功能相似
100W, 30 to 500MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON
PDF
MRF393 MRF393 M/A-Com 功能相似 744A-01
100W, 30 to 500MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON
PDF
MS1508 MS1508 Microsemi 功能相似
NPN 60V 0.01A

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