Technical parameters/dissipated power: 270000 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/gain: 7dB ~ 8.5dB
Technical parameters/minimum current amplification factor (hFE): 20 @1A, 5V
Technical parameters/rated power (Max): 270 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 270000 mW
Encapsulation parameters/installation method: Screw
Package parameters/number of pins: 9
Encapsulation parameters/Encapsulation: JT-55
External dimensions/height: 6.86 mm
External dimensions/packaging: JT-55
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MS1508
|
Microsemi | 功能相似 |
NPN 60V 0.01A
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UML125B
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Advanced Semiconductor | 功能相似 |
RF Power Bipolar Transistor, 1Element, Ultra High Frequency Band, Silicon, NPN, 0.4INCH, FM-8
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