logo
BOM RFQ Login Register
English
Home Page   Discrete Device   transistor   MOSpipe   SPU07N60C3
Warm reminder: The pictures are for reference only. The actual product may vary
Collection
Model SPU07N60C3
Description INFINEON SPU07N60C3 Power Field Effect Transistor, MOSFET, N-channel, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
Product QR code
Brand: Infineon
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
6.59  yuan 6.59yuan
10+:
$ 7.9092
100+:
$ 7.5137
500+:
$ 7.2501
1000+:
$ 7.2369
2000+:
$ 7.1842
5000+:
$ 7.1183
7500+:
$ 7.0656
10000+:
$ 7.0392
Quantity
10+
100+
500+
1000+
2000+
Price
$7.9092
$7.5137
$7.2501
$7.2369
$7.1842
Price $ 7.9092 $ 7.5137 $ 7.2501 $ 7.2369 $ 7.1842
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6923) Minimum order quantity(10)
Add to Cart Buy now
Welcome to use ICGOODFIND AI Assistant
Chip AI consultant  Chip AI consultant
Download related files
PDF
  • Disappointment
  • General
  • Satisfied
  • Like
  • Love it so much

Technical parameters/rated voltage (DC): 650 V

Technical parameters/rated current: 7.30 A

Technical parameters/number of channels: 1

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.54 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 83 W

Technical parameters/threshold voltage: 3 V

Technical parameters/input capacitance: 790 pF

Technical parameters/gate charge: 27.0 nC

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/Continuous drain current (Ids): 7.30 A

Technical parameters/rise time: 3.5 ns

Technical parameters/Input capacitance (Ciss): 790pF @25V(Vds)

Technical parameters/rated power (Max): 83 W

Technical parameters/descent time: 7 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 83W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-251-3

External dimensions/length: 6.73 mm

External dimensions/width: 2.38 mm

External dimensions/height: 6.22 mm

External dimensions/packaging: TO-251-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

The most helpful review

  Only display evaluations with images

Latest Review

Load more

There is no evaluation yet

Looking forward to your sharing the joy brought by technology

Ask a question
Most helpful | Latest
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.

No questions have been asked yet

I'm not very familiar with the product yet. Just ask around

Load more
    No data available for the time being.

Product inquiry

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIHP7N60E-GE3 SIHP7N60E-GE3 VISHAY 功能相似 TO-220-3
MOSFET N-CH 600V 7A TO-220AB
PDF
SIHP7N60E-GE3 SIHP7N60E-GE3 Vishay Siliconix 功能相似 TO-220-3
MOSFET N-CH 600V 7A TO-220AB
PDF
SIHP7N60E-GE3 SIHP7N60E-GE3 Vishay Semiconductor 功能相似 TO-220-3
MOSFET N-CH 600V 7A TO-220AB
PDF
SPI07N60S5HKSA1 SPI07N60S5HKSA1 Infineon 功能相似 TO-262-3-1
TO-262 N-CH 600V 7.3A
PDF
STD8NM60N-1 STD8NM60N-1 ST Microelectronics 功能相似 TO-251-3
N沟道600 V ， 0.56 Ω ， 7一的MDmesh II ™功率MOSFET TO- 220 ， TO- 220FP ， IPAK ， DPAK ， D2PAK N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
PDF

Newly listed products

Product service

PLATFORM

CONTACT US

  • ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
  • Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
  • Tel: +86-0755-82866643

CONTACT INFORMATION

  • WhatsApp：+8615820418003
  • Facebook Messenger：Emily He
  • WeChat：15820418003
  • Telegram：+8613641420552
  • Microsoft Teams：newkasion1
  • E-mail：sales@icgoodfind.com
  • Technical Cooperation：Ericguo@icgoodfind.com
Product Index：
Brand Index：
Friendship link : Chinese Electronic Component Distributor | STM | broadcom | Altera | ISSI | onsemi | nexperia | NXP | Microchip | diodes | lattice | Electronic Component Distributor | Analog Devices | XILINX | Texas Instruments | Infineon | TiToK | YouTube | X | Linkedln | Facebook | VK |

©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.

Scroll

Comparison

Unfold

pk

Clear