Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 70 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 3.50 A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 560pF @50V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 70W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.6 mm
External dimensions/width: 2.4 mm
External dimensions/height: 6.2 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHP7N60E-GE3
|
VISHAY | 功能相似 | TO-220-3 |
MOSFET N-CH 600V 7A TO-220AB
|
||
SIHP7N60E-GE3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET N-CH 600V 7A TO-220AB
|
||
SIHP7N60E-GE3
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
MOSFET N-CH 600V 7A TO-220AB
|
||
SPU07N60C3
|
Infineon | 功能相似 | TO-251-3 |
INFINEON SPU07N60C3 功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
|
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