Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.5 Ω |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 78 W |
|
Technical parameters/threshold voltage: | 2 V |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Continuous drain current (Ids): | 7A |
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Technical parameters/rise time: | 13 ns |
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Technical parameters/Input capacitance (Ciss): | 680pF @100V(Vds) |
|
Technical parameters/descent time: | 14 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 78000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
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Other/Minimum Packaging: | 50 |
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Other/Manufacturing Applications: | Lighting, motor drive and control, power management, industrial, communication and networking, computers and computer peripherals, alternative energy, portable equipment |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPP07N60C3
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPP07N60C3.. 功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
|
||
SPP07N60S5
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPP07N60S5 功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4.5 V
|
||
SPU07N60C3
|
Infineon | 功能相似 | TO-251-3 |
INFINEON SPU07N60C3 功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
|
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