Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 83W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 7.3A
Technical parameters/Input capacitance (Ciss): 970pF @25V(Vds)
Technical parameters/dissipated power (Max): 83W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-262-3-1
External dimensions/packaging: TO-262-3-1
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPU07N60C3
|
Infineon | 功能相似 | TO-251-3 |
INFINEON SPU07N60C3 功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
|
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