Technical parameters/clamp voltage: 22.6 V
Technical parameters/Maximum reverse voltage (Vrrm): 12V
Technical parameters/test current: 5 mA
Technical parameters/peak pulse power: 500 W
Technical parameters/minimum reverse breakdown voltage: 13.6 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: B
External dimensions/packaging: B
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N6463
|
Microsemi | 完全替代 | Case E |
高SUGRE性能为瞬态保护对于大部分关键电路。 HIGH SUGRE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS.
|
||
1N6463US
|
Microsemi | 完全替代 | E-MELF |
无空隙,密封的表面贴装单向瞬态 Voidless-Hermetically-Sealed Surface Mount Unidirectional Transient
|
||
1N6463US
|
Semtech Corporation | 完全替代 | SMT |
无空隙,密封的表面贴装单向瞬态 Voidless-Hermetically-Sealed Surface Mount Unidirectional Transient
|
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