Technical parameters/rated power: 500 W
Technical parameters/breakdown voltage: 13.6 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SMT
External dimensions/packaging: SMT
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N6463
|
Microsemi | 完全替代 | Case E |
高SUGRE性能为瞬态保护对于大部分关键电路。 HIGH SUGRE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS.
|
||
|
|
Microsemi | 完全替代 | B |
ESD 抑制器/TVS 二极管 Uni-Directional TVS
|
||
JANTXV1N6463US
|
Microsemi | 类似代替 | E-MELF |
Diode TVS Single Uni-Dir 12V 500W 2Pin SMD
|
||
JANTXV1N6463US
|
Microchip | 类似代替 | SQ-MELF-2 |
Diode TVS Single Uni-Dir 12V 500W 2Pin SMD
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