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Model 1N6463
Description 高SUGRE性能为瞬态保护对于大部分关键电路。 HIGH SUGRE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS.
Product QR code
Brand: Microsemi
Packaging Case E
Delivery time
Packaging method Bag
Standard packaging quantity 1
27.34  yuan 27.34yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2168) Minimum order quantity(1)
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Technical parameters/number of circuits:

1

 

Technical parameters/clamp voltage:

22.6 V

 

Technical parameters/Maximum reverse voltage (Vrrm):

12V

 

Technical parameters/test current:

5 mA

 

Technical parameters/peak pulse power:

500 W

 

Technical parameters/minimum reverse breakdown voltage:

13.6 V

 

Technical parameters/breakdown voltage:

13.6 V

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

2

 

Encapsulation parameters/Encapsulation:

Case E

 

Dimensions/Packaging:

Case E

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Bag

 

Other/Manufacturing Applications:

General

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
1N6463US 1N6463US Microsemi 完全替代 E-MELF
无空隙，密封的表面贴装单向瞬态 Voidless-Hermetically-Sealed Surface Mount Unidirectional Transient
PDF
1N6463US 1N6463US Semtech Corporation 完全替代 SMT
无空隙，密封的表面贴装单向瞬态 Voidless-Hermetically-Sealed Surface Mount Unidirectional Transient
PDF
JAN1N6463 JAN1N6463 Microsemi 完全替代 B
ESD 抑制器/TVS 二极管 Uni-Directional TVS
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