Technical parameters/clamp voltage: | 22.6 V |
|
Technical parameters/test current: | 5 mA |
|
Technical parameters/peak pulse power: | 500 W |
|
Technical parameters/minimum reverse breakdown voltage: | 13.6 V |
|
Technical parameters/breakdown voltage: | 13.6 V |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | E-MELF |
|
Dimensions/Packaging: | E-MELF |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Other/Manufacturing Applications: | General |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N6463
|
Microsemi | 完全替代 | Case E |
高SUGRE性能为瞬态保护对于大部分关键电路。 HIGH SUGRE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS.
|
||
|
|
Microsemi | 完全替代 | B |
ESD 抑制器/TVS 二极管 Uni-Directional TVS
|
||
JANTXV1N6463US
|
Microsemi | 类似代替 | E-MELF |
Diode TVS Single Uni-Dir 12V 500W 2Pin SMD
|
||
JANTXV1N6463US
|
Microchip | 类似代替 | SQ-MELF-2 |
Diode TVS Single Uni-Dir 12V 500W 2Pin SMD
|
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