Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 0.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 2.70 A
Technical parameters/rise time: 110 ns
Technical parameters/descent time: 26 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Precision Group | 类似代替 | SOT-223 |
VISHAY IRLL014PBF. 晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 5 V, 2 V
|
||
IRLL014PBF
|
Vishay Siliconix | 类似代替 | TO-261-4 |
VISHAY IRLL014PBF. 晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 5 V, 2 V
|
||
IRLL014PBF
|
VISHAY | 类似代替 | TO-261-4 |
VISHAY IRLL014PBF. 晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 5 V, 2 V
|
||
|
|
Rochester | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR NDT014L 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
|
||
NDT014L
|
Fairchild | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT014L 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
|
||
NTF3055-100T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR NTF3055-100T1G 晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
|
||
STN3NF06L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
|
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