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Description ON SEMICONDUCTOR NTF3055-100T1G 晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
Product QR code
Packaging TO-261-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.15  yuan 2.15yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(5791) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

60.0 V

 

Technical parameters/rated current:

3.00 A

 

Technical parameters/number of pins:

4

 

Technical parameters/drain source resistance:

0.088 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.1 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/Input capacitance:

455 pF

 

Technical parameters/gate charge:

22.0 nC

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Leakage source breakdown voltage:

68 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

3.00 A, 3.00 mA

 

Technical parameters/rise time:

14 ns

 

Technical parameters/Input capacitance (Ciss):

455pF @25V(Vds)

 

Technical parameters/rated power (Max):

1.3 W

 

Technical parameters/descent time:

13 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1.3W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

TO-261-4

 

Dimensions/Length:

6.7 mm

 

Dimensions/Width:

3.7 mm

 

Dimensions/Height:

1.65 mm

 

Dimensions/Packaging:

TO-261-4

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NVF3055-100T1G NVF3055-100T1G ON Semiconductor 类似代替 TO-261-4
N 通道功率 MOSFET,60V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
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