Technical parameters/rated voltage (DC): | 60.0 V |
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Technical parameters/rated current: | 3.00 A |
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Technical parameters/number of pins: | 4 |
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Technical parameters/drain source resistance: | 0.088 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.1 W |
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Technical parameters/threshold voltage: | 3 V |
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Technical parameters/Input capacitance: | 455 pF |
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Technical parameters/gate charge: | 22.0 nC |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 68 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 3.00 A, 3.00 mA |
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Technical parameters/rise time: | 14 ns |
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Technical parameters/Input capacitance (Ciss): | 455pF @25V(Vds) |
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Technical parameters/rated power (Max): | 1.3 W |
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Technical parameters/descent time: | 13 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.3W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Length: | 6.7 mm |
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Dimensions/Width: | 3.7 mm |
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Dimensions/Height: | 1.65 mm |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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