Technical parameters/dissipated power: 2W (Ta), 3.1W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 400pF @25V(Vds)
Technical parameters/dissipated power (Max): 2W (Ta), 3.1W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Discontinued at Digi-Key
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLL014
|
Vishay Intertechnology | 完全替代 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
|
|
Vishay Precision Group | 类似代替 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRLL014PBF
|
Vishay Siliconix | 类似代替 | TO-261-4 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRLL014PBF
|
VISHAY | 类似代替 | TO-261-4 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRLL014TR
|
VISHAY | 类似代替 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRLL014TR
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 60V 2.7A SOT223
|
|||
IRLL014TR
|
International Rectifier | 类似代替 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRLL014TR
|
Vishay Siliconix | 类似代替 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
|
|
Rochester | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR NDT014L 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
|
||
NDT014L
|
Fairchild | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT014L 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
|
||
NTF3055-100T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR NTF3055-100T1G 晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
|
||
STN3NF06L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
|
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