Technical parameters/drain source resistance: 0.28 Ω
Technical parameters/dissipated power: 3.1 W
Technical parameters/input capacitance: 400pF @25V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/length: 6.7 mm
External dimensions/packaging: SOT-223
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLL014
|
Vishay Intertechnology | 完全替代 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
|
|
Vishay Precision Group | 类似代替 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRLL014PBF
|
Vishay Siliconix | 类似代替 | TO-261-4 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRLL014PBF
|
VISHAY | 类似代替 | TO-261-4 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRLL014TR
|
VISHAY | 类似代替 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRLL014TR
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 60V 2.7A SOT223
|
|||
IRLL014TR
|
International Rectifier | 类似代替 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRLL014TR
|
Vishay Siliconix | 类似代替 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
|
|
Rochester | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR NDT014L 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
|
||
NDT014L
|
Fairchild | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT014L 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
|
||
NTF3055-100T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR NTF3055-100T1G 晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
|
||
STN3NF06L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
|
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