Technical parameters/rated voltage (DC): -200 V
Technical parameters/rated current: -3.60 A
Technical parameters/rated power: 42 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.5 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 42 W
Technical parameters/drain source voltage (Vds): -200 V
Technical parameters/leakage source breakdown voltage: -200 V
Technical parameters/Continuous drain current (Ids): -3.60 A
Technical parameters/rise time: 27.0 ns
Technical parameters/Input capacitance (Ciss): 340pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9210PBF
|
International Rectifier | 类似代替 | TO-252 |
VISHAY IRFR9210PBF. 晶体管, MOSFET, P沟道, -1.9 A, -200 V, 3 ohm, -10 V, -4 V
|
||
IRFR9210PBF
|
Vishay Semiconductor | 类似代替 | TO-252 |
VISHAY IRFR9210PBF. 晶体管, MOSFET, P沟道, -1.9 A, -200 V, 3 ohm, -10 V, -4 V
|
||
IRFR9220TRPBF
|
VISHAY | 类似代替 | TO-252-3 |
VISHAY IRFR9220TRPBF 晶体管, MOSFET, P沟道, -3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
|
||
IRFR9220TRPBF
|
International Rectifier | 类似代替 | TO-252 |
VISHAY IRFR9220TRPBF 晶体管, MOSFET, P沟道, -3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
|
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