Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 1.5 Ω |
|
Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/drain source voltage (Vds): | 200 V |
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Technical parameters/Continuous drain current (Ids): | -3.60 A |
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Technical parameters/rise time: | 27 ns |
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Technical parameters/Input capacitance (Ciss): | 340pF @25V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/descent time: | 19 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 42 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.38 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 2000 |
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Other/Manufacturing Applications: | Power Management, Industrial |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD5P20TM
|
Rochester | 功能相似 | TO-252 |
FAIRCHILD SEMICONDUCTOR FQD5P20TM 晶体管, MOSFET, P沟道, -3.7 A, -200 V, 1.1 ohm, -10 V, -3 V
|
||
IRFR9220PBF
|
Vishay Semiconductor | 类似代替 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR9220PBF
|
Vishay Precision Group | 类似代替 | TO-252 |
功率MOSFET Power MOSFET
|
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