Technical parameters/rated voltage (DC): -200 V
Technical parameters/rated current: -3.60 A
Technical parameters/polarity: P-Channel
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): -3.60 A
Technical parameters/rise time: 27.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD5P20TM
|
Rochester | 功能相似 | TO-252 |
FAIRCHILD SEMICONDUCTOR FQD5P20TM 晶体管, MOSFET, P沟道, -3.7 A, -200 V, 1.1 ohm, -10 V, -3 V
|
||
IRFR9220PBF
|
Vishay Semiconductor | 类似代替 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR9220PBF
|
Vishay Precision Group | 类似代替 | TO-252 |
功率MOSFET Power MOSFET
|
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