Technical parameters/rated voltage (DC): -200 V
Technical parameters/rated current: -1.90 A
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 25.0 W
Technical parameters/drain source voltage (Vds): -200 V
Technical parameters/leakage source breakdown voltage: -200 V
Technical parameters/Continuous drain current (Ids): -1.90 A
Technical parameters/rise time: 12.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 类似代替 | TO-252 |
P 通道 MOSFET,100V 至 400V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
IRFR9210TRPBF
|
Vishay Siliconix | 类似代替 | TO-252-3 |
P 通道 MOSFET,100V 至 400V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
IRFR9220PBF
|
Vishay Semiconductor | 类似代替 | TO-252 |
VISHAY IRFR9220PBF. 晶体管, MOSFET, P沟道, 3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
|
||
IRFR9220PBF
|
Vishay Precision Group | 类似代替 | TO-252 |
VISHAY IRFR9220PBF. 晶体管, MOSFET, P沟道, 3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review