Technical parameters/drain source resistance: 66.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 251 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 39.0 A
Technical parameters/rise time: 160 ns
Technical parameters/Input capacitance (Ciss): 2130pF @25V(Vds)
Technical parameters/rated power (Max): 251 W
Technical parameters/descent time: 150 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 251W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16.3 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SSP45N20B_FP001
|
Fairchild | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 200V 35A 3Pin(3+Tab) TO-220 Rail
|
||
SSP45N20B_FP001
|
ON Semiconductor | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 200V 35A 3Pin(3+Tab) TO-220 Rail
|
||
STP30NF20
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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