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Model SSP45N20B_FP001
Description MOSFET N-CH 200V 35A TO-220
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Brand: ON Semiconductor
Packaging TO-220-3
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8416) Minimum order quantity(1)
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Technical parameters/dissipated power: 176W (Tc)

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/Input capacitance (Ciss): 4300pF @25V(Vds)

Technical parameters/dissipated power (Max): 176W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDP39N20 FDP39N20 Fairchild 类似代替 TO-220-3
200V N沟道MOSFET 200V N-Channel MOSFET
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