Technical parameters/drain source resistance: 65.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 176W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 35.0 A
Technical parameters/Input capacitance (Ciss): 4300pF @25V(Vds)
Technical parameters/dissipated power (Max): 176W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP39N20
|
Fairchild | 类似代替 | TO-220-3 |
200V N沟道MOSFET 200V N-Channel MOSFET
|
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