logo
BOM RFQ Login Register
English
Home Page   Discrete Device   transistor   MOSpipe   STP30NF20
Warm reminder: The pictures are for reference only. The actual product may vary
Collection
Model STP30NF20
Description N 通道 STripFET™，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
Product QR code
Brand: ST Microelectronics
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
9.47  yuan 9.47yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8549) Minimum order quantity(1)
Add to Cart Buy now
Welcome to use ICGOODFIND AI Assistant
Chip AI consultant  Chip AI consultant
Download related files
PDF
  • Disappointment
  • General
  • Satisfied
  • Like
  • Love it so much

Technical parameters/rated voltage (DC):

200 V

 

Technical parameters/rated current:

30.0 A

 

Technical parameters/number of channels:

1

 

Technical parameters/drain source resistance:

75.0 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

125 W

 

Technical parameters/Input capacitance:

1.60 nF

 

Technical parameters/gate charge:

38.0 nC

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Leakage source breakdown voltage:

200 V

 

Technical parameters/Continuous drain current (Ids):

30.0 A

 

Technical parameters/rise time:

15.7 ns

 

Technical parameters/Input capacitance (Ciss):

1597pF @25V(Vds)

 

Technical parameters/rated power (Max):

125 W

 

Technical parameters/descent time:

8.8 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

125W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.4 mm

 

Dimensions/Width:

4.6 mm

 

Dimensions/Height:

15.75 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with stan

The most helpful review

  Only display evaluations with images

Latest Review

Load more

There is no evaluation yet

Looking forward to your sharing the joy brought by technology

Ask a question
Most helpful | Latest
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.

No questions have been asked yet

I'm not very familiar with the product yet. Just ask around

Load more
    No data available for the time being.

Product inquiry

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQP32N20C FQP32N20C Fairchild 功能相似 TO-220-3
QFET® N 通道 MOSFET，11A 至 30A，Fairchild Semiconductor Fairchild Semiconductor 的新型 QFET® 平面 MOSFET 使用先进的专利技术为广泛的应用提供最佳的工作性能，包括电源、PFC（功率因数校正）、直流－直流转换器、等离子显示面板 (PDP)、照明镇流器和运动控制。 它们通过降低导通电阻 (RDS(on)) 来减少通态损耗，并通过降低栅极电荷 (Qg) 和输出电容 (Coss) 来减少切换损耗。 通过使用先进的 QFET® 工艺技术，Fairchild 可提供比竞争平面 MOSFET 设备更高的品质因素 (FOM)。
PDF
FQP32N20C FQP32N20C ON Semiconductor 功能相似 TO-220-3
QFET® N 通道 MOSFET，11A 至 30A，Fairchild Semiconductor Fairchild Semiconductor 的新型 QFET® 平面 MOSFET 使用先进的专利技术为广泛的应用提供最佳的工作性能，包括电源、PFC（功率因数校正）、直流－直流转换器、等离子显示面板 (PDP)、照明镇流器和运动控制。 它们通过降低导通电阻 (RDS(on)) 来减少通态损耗，并通过降低栅极电荷 (Qg) 和输出电容 (Coss) 来减少切换损耗。 通过使用先进的 QFET® 工艺技术，Fairchild 可提供比竞争平面 MOSFET 设备更高的品质因素 (FOM)。
PDF
FQP34N20 FQP34N20 Fairchild 功能相似 TO-220-3
FAIRCHILD SEMICONDUCTOR FQP34N20 晶体管, MOSFET, N沟道, 31 A, 200 V, 0.06 ohm, 10 V, 5 V
PDF
IRFB38N20DPBF IRFB38N20DPBF Infineon 功能相似 TO-220-3
44A,200V,N沟道功率MOSFET
PDF
IRFB38N20DPBF IRFB38N20DPBF IFA 功能相似
44A,200V,N沟道功率MOSFET
PDF

Newly listed products

Product service

PLATFORM

CONTACT US

  • ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
  • Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
  • Tel: +86-0755-82866643

CONTACT INFORMATION

  • WhatsApp：+8615820418003
  • Facebook Messenger：Emily He
  • WeChat：15820418003
  • Telegram：+8613641420552
  • Microsoft Teams：newkasion1
  • E-mail：sales@icgoodfind.com
  • Technical Cooperation：Ericguo@icgoodfind.com
Product Index：
Brand Index：
Friendship link : Chinese Electronic Component Distributor | STM | broadcom | Altera | ISSI | onsemi | nexperia | NXP | Microchip | diodes | lattice | Electronic Component Distributor | Analog Devices | XILINX | Texas Instruments | Infineon | TiToK | YouTube | X | Linkedln | Facebook | VK |

©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.

Scroll

Comparison

Unfold

pk

Clear