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Specification parameters
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Technical parameters/rated power:

320 W

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.054 Ω

Technical parameters/polarity:

N-CH

Technical parameters/dissipated power:

320 W

Technical parameters/threshold voltage:

5 V

Technical parameters/Input capacitance:

2900 pF

Technical parameters/drain source voltage (Vds):

200 V

Technical parameters/Continuous drain current (Ids):

38A

Technical parameters/rise time:

95 ns

Technical parameters/Input capacitance (Ciss):

2900pF @25V(Vds)

Technical parameters/rated power (Max):

3.8 W

Technical parameters/descent time:

47 ns

Technical parameters/operating temperature (Max):

175 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

3.8W (Ta), 300W (Tc)

Encapsulation parameters/installation method:

Through Hole

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-220-3

Dimensions/Length:

10.67 mm

Dimensions/Width:

4.83 mm

Dimensions/Height:

16.51 mm

Dimensions/Packaging:

TO-220-3

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tube

Other/Manufacturing Applications:

Power Management, Power Management, Consumer Electronics, Consumer Electronics Products

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Fre

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IRFB38N20D	Infineon	类似代替	TO-220-3	TO-220AB N-CH 200V 38A
IRFB4127PBF	Infineon	类似代替	TO-220-3	INFINEON IRFB4127PBF 晶体管, MOSFET, N沟道, 76 A, 200 V, 17 mohm, 20 V, 5 V	PDF
IRFB4127PBF	International Rectifier	类似代替	TO-220-3	INFINEON IRFB4127PBF 晶体管, MOSFET, N沟道, 76 A, 200 V, 17 mohm, 20 V, 5 V	PDF
IRFB4227PBF	IRF	类似代替		INFINEON IRFB4227PBF 晶体管, MOSFET, N沟道, 65 A, 200 V, 0.0197 ohm, 10 V, 5 V
IRFB4227PBF	IFA	类似代替		INFINEON IRFB4227PBF 晶体管, MOSFET, N沟道, 65 A, 200 V, 0.0197 ohm, 10 V, 5 V	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643