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Model FQP34N20
Description FAIRCHILD SEMICONDUCTOR FQP34N20 晶体管, MOSFET, N沟道, 31 A, 200 V, 0.06 ohm, 10 V, 5 V
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Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
8.49  yuan 8.49yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8109) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

200 V

 

Technical parameters/rated current:

31.0 A

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.06 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

180 W

 

Technical parameters/threshold voltage:

5 V

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Leakage source breakdown voltage:

200 V

 

Technical parameters/breakdown voltage of gate source:

±30.0 V

 

Technical parameters/Continuous drain current (Ids):

31.0 A

 

Technical parameters/rise time:

280 ns

 

Technical parameters/Input capacitance (Ciss):

3100pF @25V(Vds)

 

Technical parameters/rated power (Max):

180 W

 

Technical parameters/descent time:

115 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

180W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.1 mm

 

Dimensions/Width:

4.7 mm

 

Dimensions/Height:

9.4 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SPA06N80C3 SPA06N80C3 Infineon 功能相似 TO-220-3
INFINEON SPA06N80C3 功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
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