Technical parameters/rated power: 1.25 W
Technical parameters/rise/fall time: 75ns, 35ns
Technical parameters/number of output interfaces: 2
Technical parameters/output voltage: 600 V
Technical parameters/output current: 290.600 mA
Technical parameters/number of channels: 2
Technical parameters/dissipated power: 1250 mW
Technical parameters/descent time (Max): 65 ns
Technical parameters/rise time (Max): 130 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1250 mW
Technical parameters/power supply voltage: 10V ~ 20V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/length: 10.5 mm
External dimensions/width: 7.6 mm
External dimensions/height: 2.35 mm
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS2110SPBF
|
International Rectifier | 类似代替 | SOIC-16 |
INFINEON IRS2110SPBF 双路芯片, MOSFET, 高压侧和低压侧, 10V-20V电源, 2A输出, 120ns延迟, SOIC-16
|
||
IRS2110SPBF
|
Infineon | 类似代替 | SOIC-16 |
INFINEON IRS2110SPBF 双路芯片, MOSFET, 高压侧和低压侧, 10V-20V电源, 2A输出, 120ns延迟, SOIC-16
|
||
IRS2113STRPBF
|
Infineon | 类似代替 | SOIC-16 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IRS2113STRPBF
|
International Rectifier | 类似代替 | SOIC-16 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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