Technical parameters/power supply voltage (DC): | 20.0V (max) |
|
Technical parameters/number of output interfaces: | 2 |
|
Technical parameters/output voltage: | 520 V |
|
Technical parameters/dissipated power: | 1.25 W |
|
Technical parameters/product series: | IRS2110 |
|
Technical parameters/rise time: | 35 ns |
|
Technical parameters/descent time: | 25 ns |
|
Technical parameters/descent time (Max): | 25 ns |
|
Technical parameters/rise time (Max): | 35 ns |
|
Technical parameters/operating temperature (Max): | 125 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
|
Technical parameters/dissipated power (Max): | 1250 mW |
|
Technical parameters/power supply voltage: | 10V ~ 20V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 16 |
|
Encapsulation parameters/Encapsulation: | SOIC-16 |
|
Dimensions/Height: | 2.35 mm |
|
Dimensions/Packaging: | SOIC-16 |
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Physical parameters/operating temperature: | -40℃ ~ 125℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS2110STRPBF
|
International Rectifier | 完全替代 | SOIC-16 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IRS2110STRPBF
|
Infineon | 完全替代 | SOIC-16 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IRS2113STRPBF
|
Infineon | 类似代替 | SOIC-16 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IRS2113STRPBF
|
International Rectifier | 类似代替 | SOIC-16 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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