Technical parameters/power supply voltage (DC): 20.0V (max)
Technical parameters/working voltage: 10V ~ 20V
Technical parameters/number of output interfaces: 2
Technical parameters/output voltage: ≥10.0 V
Technical parameters/dissipated power: 1250 mW
Technical parameters/product series: IRS2113
Technical parameters/rise time: 35ns (Max)
Technical parameters/descent time: 25ns (Max)
Technical parameters/descent time (Max): 25 ns
Technical parameters/rise time (Max): 35 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1250 mW
Technical parameters/power supply voltage: 10V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/length: 10.5 mm
External dimensions/height: 2.35 mm
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS2110SPBF
|
International Rectifier | 类似代替 | SOIC-16 |
INFINEON IRS2110SPBF 双路芯片, MOSFET, 高压侧和低压侧, 10V-20V电源, 2A输出, 120ns延迟, SOIC-16
|
||
IRS2110SPBF
|
Infineon | 类似代替 | SOIC-16 |
INFINEON IRS2110SPBF 双路芯片, MOSFET, 高压侧和低压侧, 10V-20V电源, 2A输出, 120ns延迟, SOIC-16
|
||
IRS2112SPBF
|
Infineon | 类似代替 | SOIC-16 |
MOSFET 和 IGBT 栅极驱动器,高侧和低侧,Infineon ### MOSFET 和 IGBT 驱动器,Infineon (International Rectifier)
|
||
IRS2112SPBF
|
International Rectifier | 类似代替 | SOIC-16 |
MOSFET 和 IGBT 栅极驱动器,高侧和低侧,Infineon ### MOSFET 和 IGBT 驱动器,Infineon (International Rectifier)
|
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