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Model IRS2113STRPBF

Description P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

Brand: Infineon

Packaging SOIC-16

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/power supply voltage (DC):	10.0V (min)
Technical parameters/rise/fall time:	25ns, 17ns
Technical parameters/number of output interfaces:	2
Technical parameters/output current:	2.5 A
Technical parameters/number of pins:	16
Technical parameters/dissipated power:	1.25 W
Technical parameters/rise time:	35 ns
Technical parameters/descent time:	25 ns
Technical parameters/descent time (Max):	25 ns
Technical parameters/rise time (Max):	35 ns
Technical parameters/operating temperature (Max):	125 ℃
Technical parameters/operating temperature (Min):	-40 ℃
Technical parameters/dissipated power (Max):	1250 mW
Technical parameters/power supply voltage:	10V ~ 20V
Technical parameters/power supply voltage (Max):	20 V
Technical parameters/power supply voltage (Min):	10 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	16
Encapsulation parameters/Encapsulation:	SOIC-16
Dimensions/Length:	10.5 mm
Dimensions/Width:	7.6 mm
Dimensions/Height:	2.35 mm
Dimensions/Packaging:	SOIC-16
Physical parameters/operating temperature:	-40℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

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