Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -170 mA
Technical parameters/forward voltage: -930 mV
Technical parameters/drain source resistance: 8.00 Ω
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 360mW (Ta)
Technical parameters/input capacitance: 19.0 pF
Technical parameters/gate charge: 1.50 nC
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 170 mA
Technical parameters/rise time: 16.2 ns
Technical parameters/Input capacitance (Ciss): 19pF @25V(Vds)
Technical parameters/rated power (Max): 360 mW
Technical parameters/dissipated power (Max): 360mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS84P
|
Infineon | 功能相似 | SOT-23 |
Infineon SIPMOS® P 通道 MOSFET **Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能，可能包括增强模式、连续漏极电流（约低至 80A）及宽工作温度范围。 SIPMOS 功率晶体管可用于多种应用，包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。 · 符合 AEC Q101 标准（请参阅数据表） · 无铅引线电镀，符合 RoHS 标准 ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
||
BSS84PH6327XTSA2
|
Infineon | 类似代替 | SOT-23-3 |
INFINEON BSS84PH6327XTSA2 晶体管, MOSFET, P沟道, -170 mA, -60 V, 5.8 ohm, -10 V, -1.5 V
|
||
BSS84PH6433
|
Infineon | 功能相似 | Surface Mount |
60V,8000mΩ,-0.17A,P沟道小信号MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review