Technical parameters/drain source resistance: | 8 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 360 mW |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Continuous drain current (Ids): | 170 mA |
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Technical parameters/rise time: | 9.00 ns |
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Technical parameters/Input capacitance (Ciss): | 15pF @25V(Vds) |
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Technical parameters/descent time: | 34 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/working junction temperature (Max): | 150 ℃ |
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Technical parameters/dissipated power (Max): | 360 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Length: | 2.9 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-23 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Cut Tape (CT) |
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Other/Manufacturing Applications: | Onboard charger |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2014/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS84P-E6327
|
Infineon | 功能相似 | SOT-23-3 |
SOT-23P-CH 60V 0.17A
|
||
BSS84P-L6327
|
Infineon | 类似代替 | SOT-23 |
SIPMOS小信号三极管 SIPMOS Small-Signal-Transistor
|
||
BSS84PH6327XTSA2
|
Infineon | 功能相似 | SOT-23-3 |
INFINEON BSS84PH6327XTSA2 晶体管, MOSFET, P沟道, -170 mA, -60 V, 5.8 ohm, -10 V, -1.5 V
|
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