Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 200 mW
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Panjit | 类似代替 | SOT-323 |
NXP BC807-16W 晶体管 双极-射频, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE 新
|
||
BC807-16W
|
Philips | 类似代替 | SOT-323 |
NXP BC807-16W 晶体管 双极-射频, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE 新
|
||
BC807-16W
|
PANJIT Touch Screens | 类似代替 |
NXP BC807-16W 晶体管 双极-射频, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE 新
|
|||
BC807-16W
|
NXP | 类似代替 | SOT-323 |
NXP BC807-16W 晶体管 双极-射频, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE 新
|
||
BC807-16W
|
Siemens AG | 类似代替 | SOT-323 |
NXP BC807-16W 晶体管 双极-射频, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE 新
|
||
BC807-16W
|
Diotec Semiconductor | 类似代替 |
NXP BC807-16W 晶体管 双极-射频, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE 新
|
|||
BC807-16W,115
|
NXP | 类似代替 | SOT-323-3 |
SC-70 PNP 45V 0.5A
|
||
BC807W,115
|
Nexperia | 完全替代 | SOT-323-3 |
NXP BC807W,115 单晶体管 双极, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 100 hFE
|
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