Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): -45V
Technical parameters/maximum allowable collector current: -0.5A
Technical parameters/minimum current amplification factor (hFE): 100
Technical parameters/Maximum current amplification factor (hFE): 250
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/packaging: SOT-323
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Panjit | 功能相似 | SOT-323 |
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC807-16W
|
Philips | 功能相似 | SOT-323 |
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC807-16W
|
PANJIT Touch Screens | 功能相似 |
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
|||
BC807-16W
|
NXP | 功能相似 | SOT-323 |
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC807-16W
|
Siemens AG | 功能相似 | SOT-323 |
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC807-16W
|
Diotec Semiconductor | 功能相似 |
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
|||
BC807-16W,115
|
NXP | 功能相似 | SOT-323-3 |
晶体管 双极-射频, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE
|
||
BC807-16W,135
|
NXP | 类似代替 | SOT-323-3 |
SC-70 PNP 45V 0.5A
|
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