Technical parameters/frequency: 80 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.29 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC807-16W,135
|
NXP | 类似代替 | SOT-323-3 |
SC-70 PNP 45V 0.5A
|
||
BC807W,115
|
Nexperia | 类似代替 | SOT-323-3 |
NXP BC807W,115 单晶体管 双极, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 100 hFE
|
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