Technical parameters/frequency: 80 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 200 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 290 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC807-16W,115
|
NXP | 类似代替 | SOT-323-3 |
晶体管 双极-射频, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE
|
||
BC807-16W,135
|
NXP | 完全替代 | SOT-323-3 |
SC-70 PNP 45V 0.5A
|
||
BC807W,115
|
Nexperia | 类似代替 | SOT-323-3 |
BC807W,115 编带
|
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