Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 3.00 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 700 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 20 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 230pF @10V(Vds)
Technical parameters/rated power (Max): 20 W
Technical parameters/descent time: 34 ns
Technical parameters/dissipated power (Max): 20W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 5.5 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens Semiconductor | 功能相似 | SOT-223 |
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
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||
BSP297
|
Siemens AG | 功能相似 |
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
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|||
BSP297
|
Infineon | 功能相似 | SOT-223 |
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
|
||
FDD6N20TM
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD6N20TM 晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
|
||
FDD6N20TM
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD6N20TM 晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
|
||
FQD4N20TM
|
Fairchild | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 200V 3A 3Pin(2+Tab) DPAK T/R
|
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