Encapsulation parameters/Encapsulation: | SOT-223 |
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Dimensions/Packaging: | SOT-223 |
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Other/maximum source drain voltage Vds Drain Source Voltage: | 200V |
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Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: | 14V |
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Other/Maximum Drain Current Id Drain Current: | 650mA/0.65A |
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Other/source drain on resistance Ω Rds D Ω/Ohmin Sou Ω/Ohmce On State Ω/Ohmesis: | 2Ω/Ohm @650mA,10V |
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Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: | 0.8-2V |
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Other/dissipated power Pd Power Dissipation: | 1.8W |
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Other/Specification PDF: | __ |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK2887
|
ROHM Semiconductor | 功能相似 |
开关（ 200V ， 3A ） Switching (200V, 3A)
|
|||
|
2SK2887
|
Kexin | 功能相似 |
开关（ 200V ， 3A ） Switching (200V, 3A)
|
|||
2SK2887TL
|
ROHM Semiconductor | 功能相似 | TO-252-3 |
Mosfet n-Ch 200V 3A Dpak
|
||
|
|
Siemens Semiconductor | 功能相似 | SOT-223 |
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
|
||
|
BSP297
|
Siemens AG | 功能相似 |
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
|
|||
BSP297
|
Infineon | 功能相似 | SOT-223 |
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
|
||
BSP297H6327XTSA1
|
Infineon | 功能相似 | SOT-223-4 |
Infineon SIPMOS® N 通道 MOSFET ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
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