Technical parameters/rated power: 1.8 W
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 1 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1.8 W
Technical parameters/threshold voltage: 1.4 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 0.66A
Technical parameters/rise time: 3.8 ns
Technical parameters/Input capacitance (Ciss): 357pF @25V(Vds)
Technical parameters/rated power (Max): 1.8 W
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.8W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223-4
External dimensions/length: 6.5 mm
External dimensions/width: 3.5 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-223-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Onboard charger
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens Semiconductor | 功能相似 | SOT-223 |
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
|
||
BSP297
|
Siemens AG | 功能相似 |
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
|
|||
BSP297
|
Infineon | 功能相似 | SOT-223 |
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
|
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