Technical parameters/rated power: 0.74 W
Technical parameters/dissipated power: 0.74 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Input capacitance (Ciss): 190pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 740mW (Ta)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TN2640N3-G
|
Microchip | 类似代替 | TO-92-3 |
TO-92 N-CH 400V 0.22A
|
||
TN2640N3-G
|
Supertex | 类似代替 | TO-92-3 |
TO-92 N-CH 400V 0.22A
|
||
VN4012L-G
|
Supertex | 类似代替 | TO-92-3 |
Trans MOSFET N-CH 400V 0.16A 3Pin TO-92
|
||
VN4012L-G
|
Microchip | 类似代替 | TO-92-3 |
Trans MOSFET N-CH 400V 0.16A 3Pin TO-92
|
||
VP0550N3-G
|
Microchip | 类似代替 | TO-92-3 |
场效应管(MOSFET) VP0550N3-G TO-92-3
|
||
VP0550N3-G
|
Supertex | 类似代替 | TO-92-3 |
场效应管(MOSFET) VP0550N3-G TO-92-3
|
||
ZVP0545A
|
Diodes | 功能相似 | TO-92-3 |
DIODES INC. ZVP0545A 晶体管, MOSFET, P沟道, 45 mA, -450 V, 150 ohm, -10 V, -3 V
|
||
ZVP0545A
|
Diodes Zetex | 功能相似 | TO-92-3 |
DIODES INC. ZVP0545A 晶体管, MOSFET, P沟道, 45 mA, -450 V, 150 ohm, -10 V, -3 V
|
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