Technical parameters/rated power: 1 W
Technical parameters/drain source resistance: 12.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/leakage source breakdown voltage: 400 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 160 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541900000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TP2640N3-G
|
Supertex | 类似代替 | TO-92-3 |
场效应管(MOSFET) TP2640N3-G TO-92-3
|
||
VN0550N3-G
|
Suptertex | 类似代替 |
Trans MOSFET N-CH 500V 0.05A 3Pin TO-92
|
|||
VP0550N3-G
|
Microchip | 类似代替 | TO-92-3 |
Trans MOSFET P-CH 500V 0.054A 3Pin TO-92
|
||
VP0550N3-G
|
Supertex | 类似代替 | TO-92-3 |
Trans MOSFET P-CH 500V 0.054A 3Pin TO-92
|
||
VP2450N3-G
|
Microchip | 类似代替 | TO-92-3 |
场效应管(MOSFET) VP2450N3-G TO-92-3
|
||
VP2450N3-G
|
Supertex | 类似代替 | TO-92-3 |
场效应管(MOSFET) VP2450N3-G TO-92-3
|
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